학술논문
Characterization, modeling and comparison of 1/f noise in Si/SiGe:C HBTs issued from three advanced BiCMOS technologies
Document Type
Conference Paper
Author
Source
In: Proceedings of the International Conference on Microelectronics, ICM , 2017 29th International Conference on Microelectronics, ICM 2017. (Proceedings of the International Conference on Microelectronics, ICM, 24 January 2018, 2017-December:1-4)
Subject
Language
English