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Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate

Document Type

Article

Author

Stanchu, H.; Kryvyi, S.; de Oliveira, F.M.; Mazur, Y.I.; Benamara, M.; Du, W.; Salamo, G.; Yu, S.-Q.; Margiotta, S.; Cook, M.; Grant, J.; Tran, H.; Acharya, S.; King, C.A.; Li, B.

Source

In: Journal of Physics D: Applied Physics. (Journal of Physics D: Applied Physics, 28 June 2024, 57(25))

Subject

Language

English

ISSN

13616463
00223727

Online Access

Full Text (IOP Science) Full Text (IOP) Web of Science JCR 저널정보 Scopus Find it@PNU

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