학술논문
Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4
Document Type
Article
Author
Source
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures . (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, May 2000, 18(3):1594-1597)
Subject
Language
English
ISSN
10711023