학술논문
10 MHz-Switching on GaN Trench CAVET up to 300 ◦ C Operation Enabled by High Channel Mobility
Document Type
Article
Author
Source
In: IEEE Electron Device Letters . (IEEE Electron Device Letters, 1 April 2024, 45(4):653-656)
Subject
Language
English
ISSN
15580563
07413106
07413106