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Probing nanoscale local lattice strains in advanced Si complementary metal-oxide-semiconductor devices

Document Type

Article

Author

Huang, J.; Kim, M.J.; Chidambaram, P.R.; Irwin, R.B.; Jones, P.J.; Weijtmans, J.W.; Koontz, E.M.; Wang, Y.G.; Tang, S.; Wise, R.

Source

In: Applied Physics Letters. (Applied Physics Letters, 2006, 89(6))

Subject

Language

English

ISSN

00036951

Online Access

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

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