학술논문
On the Effect of Etching with a Focused Ga+ Ion Beam in the Energy Range 12–30 keV on the Luminescent Properties of the Al0.18 Ga0.82 As/GaAs/Al0.18 Ga0.82 As Heterostructure
Document Type
Article
Author
Source
In: Semiconductors . (Semiconductors, June 2023, 57(6):316-319)
Subject
Language
English
ISSN
10906479
10637826
10637826