학술논문

Performance Investigation of Ge Based Pocket Doped TMSG-TFET with a SiO2/HFO2 Stacked Gate Oxide Structure for Enhanced Drain Current for Low Power Applications
Document Type
Article
Source
In: Silicon. (Silicon, November 2022, 14(17):11209-11218)
Subject
Language
English
ISSN
18769918
1876990X