학술논문
Promising Engineering Approaches for Improving the Reliability of HfZrOx 2-D and 3-D Ferroelectric Random Access Memories
Document Type
Article
Author
Source
In: IEEE Transactions on Electron Devices . (IEEE Transactions on Electron Devices, December 2020, 67(12):5479-5483)
Subject
Language
English
ISSN
15579646
00189383
00189383