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Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias

Document Type

Article

Author

Peng, Y.; Guo, H.; Gong, R.; Liu, H.; Shao, P.; Sun, N.; Ren, F.; Ye, J.; Zheng, Y.; Lu, H.; Zhang, R.; Chen, D.

Source

In: Applied Physics Letters. (Applied Physics Letters, 22 April 2024, 124(17))

Subject

Language

English

ISSN

00036951

Online Access

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

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