학술논문
Toward Energy-Efficient Ferroelectric Field-Effect Transistors and Ferroelectric Random Access Memories: Tailoring the Coercive Field of Ferroelectric HfO2 Films
Document Type
Article
Author
Source
In: Physica Status Solidi (A) Applications and Materials Science . (Physica Status Solidi (A) Applications and Materials Science, March 2024, 221(6))
Subject
Language
English
ISSN
18626319
18626300
18626300