학술논문
Investigation and Analysis of Dual Metal Gate Overlap on Drain Side Tunneling Field Effect Transistor with Spacer in 10nm Node
Document Type
Article
Author
Source
In: International Journal of Engineering, Transactions B: Applications . (International Journal of Engineering, Transactions B: Applications, May 2024, 37(5):887-895)
Subject
Language
English
ISSN
1728144X