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Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices

Document Type

Article

Author

Cipro, R.; Baron, T.; Martin, M.; Moeyaert, J.; David, S.; Gorbenko, V.; Bassani, F.; Bogumilowicz, Y.; Barnes, J.P.; Rochat, N.; Loup, V.; Vizioz, C.; Allouti, N.; Chauvin, N.; Bao, X.Y.; Ye, Z.; Pin, J.B.; Sanchez, E.

Source

In: Applied Physics Letters. (Applied Physics Letters, 30 June 2014, 104(26))

Subject

Language

English

ISSN

00036951

Online Access

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

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