학술논문
Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-μm AlGaN/GaN HEMTs for Power RF Applications
Document Type
Article
Author
Source
In: IEEE Transactions on Device and Materials Reliability . (IEEE Transactions on Device and Materials Reliability, 1 December 2023, 23(4):453-460)
Subject
Language
English
ISSN
15582574
15304388
15304388