학술논문
Impact of Graded AlGaN Buffer Layer Thickness on the DC, RF, Linearity, Intermodulation and Off-State Breakdown Characteristics of AlGaN Channel HEMT
Document Type
Article
Author
Source
In: IETE Technical Review (Institution of Electronics and Telecommunication Engineers, India) . (IETE Technical Review (Institution of Electronics and Telecommunication Engineers, India), 2024, 41(5):602-611)
Subject
Language
English
ISSN
09745971
02564602
02564602