학술논문
Homoepitaxial growth of ZnO films with reduced impurity concentrations by helicon-wave-excited-plasma sputtering epitaxy using a crystalline ZnO target prepared by hydrothermal technique
Document Type
Article
Author
Source
In: Japanese Journal of Applied Physics . (Japanese Journal of Applied Physics, 1 October 2014, 53(10))
Subject
Language
English
ISSN
13474065
00214922
00214922