학술논문

Sub-100-nm partial-ground-plane (PGP) silicon-on-insu-lator (SOI) MOSFET structure for radio-frequency and digital applications
Document Type
Article
Source
In: Technology Reports of Kansai University. (Technology Reports of Kansai University, 2002, 44:1-15)
Subject
Language
English
ISSN
04532198