학술논문
Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes
Document Type
Article
Author
Source
In: Applied Physics Letters . (Applied Physics Letters, 1995, :1186)
Subject
Language
English
ISSN
00036951