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High-efficiency InGaN red light-emitting diodes with external quantum efficiency of 10.5% using extended quantum well structure with AlGaN interlayers

Document Type

Article

Author

Lee, D.-G.; Choi, Y.; Jung, S.; Kim, Y.; Park, S.; Choi, P.; Yoon, S.

Source

In: Applied Physics Letters. (Applied Physics Letters, 18 March 2024, 124(12))

Subject

Language

English

ISSN

00036951

Online Access

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

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