학술논문
Abnormal on Current Tendency in Saturation Region Between High and Light Carbon Doped Buffer Layer in p-GaN HEMT
Document Type
Article
Author
Source
In: IEEE Electron Device Letters . (IEEE Electron Device Letters, 1 July 2023, 44(7):1164-1167)
Subject
Language
English
ISSN
15580563
07413106
07413106