학술논문
Application of piezoresistance effect in highly uniaxially strained p-Si and n-Si for current-carrier mobility increase
Document Type
Article
Author
Source
In: Physica Status Solidi (B) Basic Research . (Physica Status Solidi (B) Basic Research, March 2009, 246(3):652-654)
Subject
Language
English
ISSN
03701972
15213951
15213951