학술논문

NexFET generation 2, new way to power

Document Type

Conference Paper

Author

Yang, B.; Xu, S.; Korec, J.; Wang, J.; Lopez, O.; Jauregui, D.; Kocon, C.; Herbsommer, J.; Molloy, S.; Daum, G.; Lin, H.; Pearce, C.; Noquil, J.; Shen, J.

Source

In: Technical Digest - International Electron Devices Meeting, IEDM, 2011 International Electron Devices Meeting, IEDM 2011. (Technical Digest - International Electron Devices Meeting, IEDM, 2011, :26.1.1-26.1.4)

Subject

Language

English

ISSN

01631918

Online Access

Full Text (IEEE) Scopus Find it@PNU

이메일

부산대학교 도서관

Online Access

메일 발송