학술논문
On the mechanisms of SiO 2 thin-film growth by the full atomic layer deposition process using bis(t-butylamino)silane on the hydroxylated SiO 2 (001) surface
Document Type
Article
Author
Source
In: Journal of Physical Chemistry C . (Journal of Physical Chemistry C, 12 January 2012, 116(1):947-952)
Subject
Language
English
ISSN
19327447
19327455
19327455