학술논문
Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si1-x Gex step-graded buffer layers for high- κ III-V metal-oxide-semiconductor field effect transistor applications
Document Type
Article
Author
Source
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures . (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2007, 25(3):1098-1102)
Subject
Language
English
ISSN
10711023