학술논문
1.17 GW/cm2 AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate
Document Type
Article
Author
Source
In: IEEE Electron Device Letters . (IEEE Electron Device Letters, 1 June 2024, 45(6):1048-1051)
Subject
Language
English
ISSN
15580563
07413106
07413106