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Gate-bias stability of triple-gated feedback field-effect transistors with silicon nanosheet channels

Document Type

Article

Author

Heo, H.; Shin, Y.; Son, J.; Cho, K.; Kim, S.; Ryu, S.

Source

In: Nanotechnology. (Nanotechnology, 1 July 2024, 35(27))

Subject

Language

English

ISSN

13616528
09574484

Online Access

Full Text (IOP Science) Full Text (IOP) Web of Science JCR 저널정보 Scopus Find it@PNU

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