학술논문
High-Pressure Deuterium Annealing for Trap Passivation for a 3-D Integrated Structure
Document Type
Article
Author
Source
In: IEEE Transactions on Electron Devices . (IEEE Transactions on Electron Devices, 1 April 2024, 71(4):2801-2804)
Subject
Language
English
ISSN
15579646
00189383
00189383