학술논문
Interferometric in-situ III/V semiconductor dry-etch depth-control with ±0.8 nm best accuracy using a quadruple-Vernier-scale measurement
Document Type
Article
Source
In: Journal of Vacuum Science and Technology B . (Journal of Vacuum Science and Technology B, 1 September 2021, 39(5))
Subject
Language
English
ISSN
21662754
21662746
21662746