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Recombination dynamics in planar and three-dimensional InGaN/GaN light emitting diode structures

Document Type

Article

Author

Vogt, A.; Hartmann, J.; Zhou, H.; Mohajerani, M.S.; Fündling, S.; Szafranski, B.; Wehmann, H.-H.; Waag, A.; Voss, T.; Schimpke, T.; Avramescu, A.; Strassburg, M.

Source

In: Journal of Materials Research. (Journal of Materials Research, 14 July 2017, 32(13):2456-2463)

Subject

Language

English

ISSN

20445326
08842914

Online Access

Full Text (ProQuest Central) Web of Science JCR 저널정보 Scopus Find it@PNU

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