학술논문
Scaling Benefits for Active and Gate Insulator of Vertical Channel Thin-Film Transistors Using Atomic Layer Deposited InGaZnO Channel
Document Type
Article
Source
In: IEEE Electron Device Letters . (IEEE Electron Device Letters, 1 March 2024, 45(3):404-407)
Subject
Language
English
ISSN
15580563
07413106
07413106