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Characterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structures

Document Type

Article

Author

Tang, H.; Belmonte, A.; Lin, D.; Afanas'ev, V.; Verdonck, P.; Chasin, A.; Dekkers, H.; Delhougne, R.; Van Houdt, J.; Sankar Kar, G.

Source

In: Solid-State Electronics. (Solid-State Electronics, April 2024, 214)

Subject

Language

English

ISSN

00381101

Online Access

Full Text (ScienceDirect 종량제) Web of Science JCR 저널정보 Scopus Find it@PNU

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