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Buried SiGe as a performance booster in n-channel FDSOI MOSFETs

Document Type

Article

Author

Clifton, P.; Goebel, A.; Mulfinger, R.; Child, A.; Straub, S.; Sporer, R.; Carter, R.; Kluth, J.; Schaeffer, J.; Nguyen, B.-Y.; Chabanne, G.; Daval, N.; Schwarzenbach, W.; Hemkar, M.; Chu, S.; Moffatt, S.

Source

In: Solid-State Electronics. (Solid-State Electronics, December 2019, 162)

Subject

Language

English

ISSN

00381101

Online Access

Full Text (ScienceDirect) Web of Science JCR 저널정보 Scopus Find it@PNU

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