학술논문
Incorporation and activation of arsenic dopant in single-crystal cdte grown on si by molecular beam epitaxy
Document Type
Article
Author
Source
In: Journal of Electronic Materials , 2013 U.S. Workshop on the Physics and Chemistry of II-VI Materials. Guest Editors: S. Sivananthan and N. K. Dhar. (Journal of Electronic Materials, August 2014, 43(8):2998-3003)
Subject
Language
English
ISSN
03615235