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Nano-analytical investigation of the forming process in an Hf O 2 -based resistive switching memory

Document Type

Article

Author

Lefevre, G.; Guillaume, N.; Dewolf, T.; Blonkowski, S.; Charpin-Nicolle, C.; Jalaguier, E.; Nowak, E.; Bernier, N.; Audoit, G.; Blomberg, T.; Tuominen, M.; Sprey, H.; Schamm-Chardon, S.

Source

In: Journal of Applied Physics. (Journal of Applied Physics, 28 December 2021, 130(24))

Subject

Language

English

ISSN

10897550
00218979

Online Access

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

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