학술논문

Towards high-k integration with III-V channels: Interface optimization of high pressure sputtered gadolinium oxide on indium phospide
Document Type
Conference Paper
Source
In: Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013, Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013. (Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013, 2013, :25-28)
Subject
Language
English