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Modulated growth of thick GaN with hydride vapor phase epitaxy

Document Type

Article

Author

Zhang, W.; Alves, H.R.; Meister, D.; Kriegseis, W.; Hofmann, D.M.; Meyer, B.K.; Riemann, T.; Christen, J.; Krost, A.; Heuken, M.

Source

In: Journal of Crystal Growth. (Journal of Crystal Growth, February 2002, 234(4):616-622)

Subject

Language

English

ISSN

00220248

Online Access

Full Text (ScienceDirect) Web of Science JCR 저널정보 Scopus Find it@PNU

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