학술논문
Selective area growth of high-density GaN nanowire arrays on Si(111)
Document Type
Conference
Author
Source
2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) Photonics Society Summer Topical Meeting Series (SUM), 2016 IEEE. :169-170 Jul, 2016
Subject
Language
Abstract
Selective-area growth of high-density GaN nanowires on Si(111) substrate by plasma-assisted molecular beam epitaxy is studied. AlN nanopedestals used as nanowires growth seeds are fabricated by nanoimprint lithography. GaN nanowires with hexagonal cross-section show the best optical quality with a strong resonant emission at 3.457eV.