학술논문
Improvement the Q-factor of multi-band inductor with 90 μm silicon substrate on plastic
Document Type
Conference
Author
Source
2010 International Symposium on Signals, Systems and Electronics Signals Systems and Electronics (ISSSE), 2010 International Symposium on. 1:1-4 Sep, 2010
Subject
Language
ISSN
2161-0819
2161-0827
2161-0827
Abstract
This paper presents the multi-band inductor with 0.18 μm CMOS technology on plastic achieves high Q-factor and small size for multiband applications. The multi-band inductor on VLSI-standard Si Substrate is operated at ultra-wide band range. The operation frequencies are near 3 GHz, 4 GHz, 7.5 GHz and 9 GHz of the Q-factor are 6.5, 6.7, 8 and 11.5 with the inductance 2.1, 1.6, 1.1, 0.6 nH, respectively. After thinning-down the Si substrate to 90 μm and mounting on plastic, the Q-factor can improve 25~31% without changing the inductance due to reducing the parasitic effect from Si-substrate.