학술논문

Tackling hillocks growth after aluminum CMP
Document Type
Conference
Source
Proceedings of International Conference on Planarization/CMP Technology 2014 Planarization/CMP Technology (ICPT), 2014 International Conference on. :129-132 Nov, 2014
Subject
Engineered Materials, Dielectrics and Plasmas
Aluminum
Annealing
Stress
Microscopy
Planarization
Sputtering
Language
Abstract
The surface of polished aluminum damascene structures is subject to strong growth of hillock structures, which is increased by elevated temperatures. Such hillock structures interfere with subsequent processing and should therefore be removed. We present an easy “repolishing” method, which employs provoked post-CMP growth of hillocks by annealing, and subsequent removal of the newly grown hillocks by a short, additional polishing step. Investigation with atomic-force and secondary electron microscopy indicates a significant decrease of the density and height of the hillock structures.