부산대학교 도서관

Deep neural network (DNN) inference can be performed efficiently with analog in memory computing (AiMC). MRAM is an attractive solution to implement the DNN weights due to its non-volatility and scalability. However, accurate inference requires memories with multi-level conductance values. while MRAM is binary. In this work, we propose and demonstrate a multi-level SOT-MRAM device concept by placing multiple MTJ pillars between a single SOT track and common top electrode. Selective level programming is achieved by smartly using a pillar-position dependent VCMA-assist effect. Three DNN algorithm-driven technology requirements are derived: number of conductance levels, bit-error rate and conductance variation. This work demonstrates that multi-pillar SOT-MRAM meets all derived specifications, making it a promising candidate as memory device for accurate analog in-memory DNN inference.