학술논문

GeSe-Based Ovonic Threshold Switching Volatile True Random Number Generator
Document Type
Periodical
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 41(2):228-231 Feb, 2020
Subject
Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Switches
NIST
Cryptography
Current measurement
Throughput
Pulse measurements
Generators
Selector
OTS
GeSe
random number generation
variability
resistive-switching memory (RRAM)
Language
ISSN
0741-3106
1558-0563
Abstract
In this paper, we propose and demonstrate a novel technique for true random number generator (TRNG) application using GeSe-based Ovonic threshold switching (OTS) selector devices. The inherent variability in OTS threshold voltage results in a bimodal distribution of on/off states which can be easily converted into digital bits. The experimental evaluation shows that the proposed TRNG enables the generation of high-quality random bits that passed 12 tests in the National Institute of Standards and Technology statistical test suite without complex external circuits for post-processing. The randomness is further evidenced by the prediction rate of ~ 50% using machine learning algorithm. Compared with the TRNGs based on non-volatile memories, the volatile nature of OTS avoids the reset operation, thus further simplifying the operation and improving the generation frequency.