학술논문
Impacts of Ta Buffer Layer and Cu–Ge–Te Composition on the Reliability of GeSe-Based CBRAM
Document Type
Periodical
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 66(12):5133-5138 Dec, 2019
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
We analyze the switching and retention properties of 65-nm integrated Cu(-Ge-Te)/(Ta)/GeSe conductive bridge random access memory devices operated at $50~\mu \text{A}$ . We evidence the crucial role played by a Ta buffer layer inserted between the Cu alloy and GeSe layers in decreasing the preforming current and in significantly improving the low-resistance state retention. Cu alloys of different compositions are tested to reveal lower device variability and longer retention with Cu 2 GeTe 3 active electrode.