학술논문

Test results and irradiation performances of 3-D circuits developed in the framework of ATLAS hybrid pixel upgrade
Document Type
Conference
Source
IEEE Nuclear Science Symposuim & Medical Imaging Conference Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE. :1551-1555 Oct, 2010
Subject
Nuclear Engineering
Engineered Materials, Dielectrics and Plasmas
Bioengineering
Power, Energy and Industry Applications
Components, Circuits, Devices and Systems
Computing and Processing
Communication, Networking and Broadcast Technologies
Pixel
MOS devices
Transistors
Detectors
Latches
Layout
Radiation effects
Language
ISSN
1082-3654
Abstract
Vertex detectors for High Energy Physics experiments require pixel detectors featuring high spatial resolution, very good signal to noise ratio and radiation hardness. A way to face new challenges of ATLAS/SLHC future hybrid pixel vertex detectors is to use the emerging 3-D Integrated Technologies. However, commercial offers of such technologies are only very few and the 3-D designer's choice is then hardly constrained. Moreover, as radiation hardness and specially SEU tolerance of configuration registers is a crucial issue for SLHC vertex detectors and, as commercial data on this point are always missing, a reliable qualification program is to be developed for any candidate technology. We will present the design and test (including radiation tests with 70 kV, 60W X-Ray source and 24 GeV protons) of Chartered, 130nm Low Power 2-D chips realized for this qualification.