학술논문

Enhanced electro-optic effect in InAs/GaAs quantum dots
Document Type
Conference
Source
2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on. :1-2 May, 2008
Subject
Photonics and Electrooptics
Components, Circuits, Devices and Systems
Gallium arsenide
Quantum dots
Optical waveguides
Electrooptical waveguides
Optical fiber testing
Electrooptic modulators
Optical buffering
Optical interferometry
Optical fiber couplers
Voltage
(190.4360) Nonlinear optical devices
(190.4720) Optical nonlinearities of condensed matter
Language
Abstract
The electro-optic properties of InAs/GaAs quantum dots are studied in an external Mach-Zehnder Interferometer setup. The InAs/GaAs quantum dots are found to increase modulation relative to bulk GaAs and exhibit an electro-optic coefficient of 26pm/V.