학술논문
A 1.55-μm waveband optical absorption characterization of highly-stacked InAs/InGaAlAs quantum dot structure for electro-absorption devices
Document Type
Conference
Author
Source
Microwave Photonics (MWP) and the 2014 9th Asia-Pacific Microwave Photonics Conference (APMP) 2014 International Topical Meeting on Microwave Photonics (MWP) and the 2014 9th Asia-Pacific Microwave Photonics Conference (APMP), 2014 International Topical Meeting on. :93-96 Oct, 2014
Subject
Language
Abstract
We have successfully developed a quantum dot (QD) electro-absorption device with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 9.0-V reverse bias voltage are clearly observed in the developed QD device.