학술논문
Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks
Document Type
Conference
Author
Source
2022 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2022 IEEE International. :P12-1-P12-4 Mar, 2022
Subject
Language
ISSN
1938-1891
Abstract
This paper investigates the characterization of charge trapping and its modelling on hafnia-based ferroelectric field effect transistors (FeFETs). Defect characterization on MOSFETs can be done by studying threshold voltage shifts (∆V th ) as a function of charging and relaxation times. At positive gate voltages one expects electron trapping in the gate oxide to result in a positive shift of the threshold voltage (V th ). However, on a FeFET those conditions will induce polarization changes in the gate oxide leading to a negative V th -shift, complicating the characterization of defect levels. We aim to alleviate these difficulties by modelling the polarization and trapping in FeFETs over a wide range of timescales, suitable for defect characterization. We demonstrate quantitative agreement on long timescales with a static polarization model, while a time-dependent polarization model can be used for qualitative agreement over a wide range of times from 30 ms to 2 ks.