학술논문
Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics
Document Type
Conference
Author
Source
2022 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2022 IEEE International. :4A.4-1-4A.4-8 Mar, 2022
Subject
Language
ISSN
1938-1891
Abstract
Temperature dependence of charge capture and emission in HfO 2 and ferroelectric doped HfO 2 are examined over a wide temperature range. Sizeable threshold voltage (V th ) instabilities are observed under cryogenic conditions, contrary to expectation of Arrhenius-based defect freeze-out. The observed data is modelled with ultra-fast defect levels, located close to the silicon channel. The impact of these traps at room temperature on ferroelectric devices is significant: capture and emission times lie in the range applied for ferroelectric device operation, and can explain the read-after-write delay incorporated in Si-based ferro (FE-)FET operation.