학술논문
Chitosan-Based Electrolyte Gated Low Voltage Oxide Transistor With a Coplanar Modulatory Terminal
Document Type
Periodical
Author
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 38(3):322-325 Mar, 2017
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
Indium-zinc-oxide thin-film transistors (TFTs) using chitosan-based bio-polysaccharide electrolytes as the gate dielectric are fabricated. The TFTs show a good electrical performance with a very low operation voltage of ~1.0 V. Specific gate capacitance of the electrolyte film and electrical performance of the TFTs can be effectively modulated by the coplanar modulatory terminal due to synergic proton gating effects. Furthermore, a resistor-loaded inverter is investigated, and balanced noise margin is obtained. Such oxide-based TFTs with additional modulatory terminal may find potential applications in portable electronics.