학술논문
Characterization of semi-insulating InP: Cu
Document Type
Conference
Author
Source
Proceedings of the 7th Conference on Semi-insulating III-V Materials, Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on. :273-278 1992
Subject
Language
Abstract
Systematic characterization of InP diffused with Cu have shown that both initially p-type and n-type InP become semi-insulating after Cu diffusion. It is also observed that thermally stable In-Cu rich precipitates form, that the concentration of deep levels is negligible and that InP:Cu samples exhibit inhomogeneities and anomalous transport behavior. These observations support the supposition that the observed semi-insulating behavior in InP:Cu can be best explained by the buried Schottky barrier model, instead of the commonly observed compensation by deep levels.