학술논문
Electrical and optical properties of carbon-related defects in GaN
Document Type
Conference
Source
2003 International Symposium on Compound Semiconductors Compound semiconductors Compound Semiconductors, 2003. International Symposium on. :57-58 2003
Subject
Language
Abstract
The electrical and optical properties of carbon-related defects in GaN are studied. A series of samples with C concentrations varying from 5x10/sup 16/ to 1x10/sup 20/cm/sup -3/was characterized by SIMS, resistivity, photoluminescence, thermally simulated current, Raman scattering, and positron annihilation spectroscopy.