학술논문
Universality of power-law voltage dependence for TDDB lifetime in thin gate oxide PMOSFETs
Document Type
Conference
Author
Source
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Reliability physics Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International. :372-376 2005
Subject
Language
ISSN
1541-7026
1938-1891
1938-1891
Abstract
Voltage, polarity and thickness dependencies of time-to breakdown in n-FETs and p-FETs are investigated under inversion and accumulation conditions. The voltage dependence of all the cases is clearly described by a power-law. The voltage acceleration exponents (n) of the power-law of 45 (n-FETs inv.), 40 (n-FETs acc.) and 44 (p-FETs acc.) are independent of thickness. On the other hand, in p-FETs under inversion mode, the exponents (n) are /spl sim/45 for |Vg|>3.8 V and 33 for |Vg|